1.5 μm Emission from a Silicon MOS-LED Based on a Dislocation Network

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346912

M. Kittler, M. Reiche, X. Yu, T. Arguirov, O. Vyvenko, W. Seifert, T. Mchedlidze, G. Jia, T. Wilhelm

引用次数: 8

Abstract

A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage

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基于位错网络的1.5 μm硅MOS-LED发射

介绍了一种完全兼容Si技术的新型MOS-LED。它基于晶圆直接键合制备的位错网络。当网络靠近靠近栅极电压诱导的堆积层的Si/SiO2界面时，在1.5 μm处观察到光发射

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 International Electron Devices Meeting

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