Analog circuit design based on independently driven double gate MOSfet

P. Freitas, G. Billiot, J. Bégueret, H. Lapuyade
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引用次数: 2

Abstract

This paper reviews two basic analog circuits that employ new capabilities brought about by independently driven double gate CMOS transistors (IDGMOS). The subject of the first review is a 1 V supply voltage follower that uses IDGMOS to increase the input range up to the supply voltage and to enhance the biasing circuit of the follower. The second looks at a new general method to make fully balanced differential amplifiers (FBAs) with compact common-mode feed back. IDGMOS FBAs perform complete transistor reuse without using any extra device to execute the feed-back amplifier functions, i.e. error evaluation and amplification. An application of this is illustrated with the simulation of a simple 1-stage differential amplifier with 38 dB gain and a 90.3 degree phase margin. The complete feed back loop includes the aforementioned voltage follower. The common-mode open loop gain is only about 21 dB but the common-mode reference voltage range, within 10% relative error, remains between 0.3 V and 0.9 V.
基于独立驱动双栅MOSfet的模拟电路设计
本文综述了采用独立驱动双栅CMOS晶体管(IDGMOS)带来的新功能的两种基本模拟电路。第一个回顾的主题是一个1 V电源电压跟随器,它使用IDGMOS将输入范围增加到电源电压,并增强跟随器的偏置电路。第二部分研究了一种新的通用方法来制作具有紧凑共模反馈的全平衡差分放大器(FBAs)。IDGMOS FBAs无需使用任何额外的器件来执行反馈放大器功能,即误差评估和放大,即可完成晶体管的完全重用。通过对增益为38db、相位裕度为90.3度的简单1级差分放大器的仿真,说明了该方法的应用。完整的反馈回路包括前面提到的电压跟随器。共模开环增益仅为21 dB左右,但共模参考电压范围在0.3 V ~ 0.9 V之间,相对误差在10%以内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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