Characterization of II-VI alloy semiconductor layers by photoreflectance spectroscopy and prism-coupler method

Abstract

Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs [100] oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on [111] zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material.