Characterization of Band-Edge Photorefractive Effect in Compound Semiconductors

A. Partovi, A. Kost, E. Garmire, G. Valley, M. Klein
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Abstract

We have recently shown that at optical wavelengths near the band-edge, non-electrooptic gratings can be used for two beam coupling energy transfer [1]. By combining these gratings with conventional electrooptic gratings, very large gain coefficients can be achieved. We will present measurements of the wavelength dependence of the two-beam-coupling gain in compound semiconductors. A large increase in the amount of energy transfer is observed near the band edge, as compared with values at longer wavelengths. We will discuss the relative magnitude and origins of the mechanisms involved and compare the beam coupling results with direct measurements of the nonlinearities. We will discuss possible applications.
化合物半导体带边光折变效应的表征
我们最近的研究表明,在靠近带边的光学波长处,非电光光栅可以用于两束耦合能量传递[1]。通过将这些光栅与传统的电光光栅相结合,可以获得非常大的增益系数。我们将提出测量波长依赖的双光束耦合增益在化合物半导体。与较长波长的值相比,在带边缘附近观察到能量转移量的大量增加。我们将讨论所涉及的机制的相对大小和起源,并将光束耦合结果与非线性的直接测量进行比较。我们将讨论可能的应用。
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