Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)

Abstract

This paper analyzed the Carbon Nano Tube (CNT) field-effect carrier mobility at the low field in the back-gated CNT-FET devices. This model is based on calculating the mean free paths of carrier concerning the several scattering mechanisms and multi-band transport. The mobility-based parameters like charge density and conductance are analyzed by varying Carbon Nano Tube”s length and diameter. It's observed that high ballistic transport was achieved when the length of CNT was less than the mean free path of carrier.