An Integrated CMOS Low Noise Amplifier for 3-5 GHz UWB Applications

Abstract

For the ultra-wide-band communication applications, this work presents a two-stage topology to implement a low noise amplifier (LNA) based on the 0.18 um TSMC CMOS technology. We adopt the voltage-current resistor feedback and shunt-peaked circuit to obtain measurement results of maximum gain in 14.0 dB, noise figure below 5.25 dB, input and output reflection coefficients below -11dB within the bandwidth between 3 GHz to 5 GHz.