Demonstration of Various h-BN Based Diodes with TCAD Simulation

Abstract

Hexagonal boron nitride (h-BN), a material currently unavailable in the material library of TCAD Silvaco, is manually defined in Silvaco Atlas with the physics properties previously reported. Two h-BN/GaN p-n diodes and a lateral h-BN Schottky barrier diode are simulated, and their thermal and electrical characteristics at forward bias are investigated, which gives a preliminary forecast of the future h-BN electronics devices.