{"title":"Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 /spl mu/m defect characterization tool","authors":"Y. Doong, Jui-Mei Fu, Y. Hsieh","doi":"10.1109/IPFA.1997.638125","DOIUrl":null,"url":null,"abstract":"A sub-0.25 /spl mu/m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples/sup 4-8/. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A sub-0.25 /spl mu/m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples/sup 4-8/. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.