Write amplification reduction in NAND Flash through multi-write coding

A. Jagmohan, M. Franceschini, L. Lastras
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引用次数: 39

Abstract

The block erase requirement in NAND Flash devices leads to the need for garbage collection. Garbage collection results in write amplification, that is, to an increase in the number of physical page programming operations. Write amplification adversely impacts the limited lifetime of a NAND Flash device, and can add significant system overhead unless a large spare factor is maintained. This paper proposes a NAND Flash system which uses multi-write coding to reduce write amplification. Multi-write coding allows a NAND Flash page to be written more than once without requiring an intervening block erase. We present a novel two-write coding technique based on enumerative coding, which achieves linear coding rates with low computational complexity. The proposed technique also seeks to minimize memory wear by reducing the number of programmed cells per page write. We describe a system which uses lossless data compression in conjunction with multi-write coding, and show through simulations that the proposed system has significantly reduced write amplification and memory wear.
通过多写编码减少NAND闪存的写放大
NAND闪存设备中的块擦除要求导致需要垃圾收集。垃圾收集导致写放大,即增加物理页编程操作的数量。写入放大会对NAND闪存设备有限的寿命产生不利影响,并且会增加显著的系统开销,除非维护大量的备用因素。本文提出了一种采用多写编码来减小写放大的NAND闪存系统。多次写入编码允许NAND闪存页被多次写入,而不需要中间的块擦除。提出了一种新的基于枚举编码的双写编码技术,该技术实现了低计算复杂度的线性编码率。所提出的技术还寻求通过减少每个页面写入的编程单元的数量来最小化内存损耗。我们描述了一个将无损数据压缩与多写编码相结合的系统,并通过仿真表明,所提出的系统显著降低了写放大和内存损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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