A 27.6 MHz 297 μW 33 ppm/°C CMOS relaxation oscillator with an adjustable temperature compensation scheme

Qiang Zhao, Ruibin Xie, Y. Ma, Fengbo Xie, Feng Lin, Shengdong Zhang
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Abstract

A 27.6 MHz 297 μW relaxation oscillator is presented in this paper by using an 180-nm CMOS technology. The proposed oscillator employs an adjustable temperature compensation feedforward scheme, in which the charging current can be set steady by a four-bit digital trimming signal. We have demonstrated a frequency variation lower than 33.5 ppm/°C which could be close to 0 ppm/°C in theory if the precision is high enough. In practical production, it is effective to calibrate the mismatching and deviation of fabrication because of the novel adjustable temperature compensation scheme.
27.6 MHz 297 μW 33 ppm/°C CMOS弛豫振荡器,具有可调温度补偿方案
采用180nm CMOS技术,设计了一个27.6 MHz 297 μW的弛豫振荡器。该振荡器采用可调温度补偿前馈方案,充电电流可通过4位数字微调信号稳定设定。我们已经证明了低于33.5 ppm/°C的频率变化,如果精度足够高,理论上可以接近0 ppm/°C。在实际生产中,由于采用了新颖的可调温度补偿方案,可以有效地校正加工过程中的不匹配和偏差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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