First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers

Abstract

InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<>