C2IM: A Compact Computing-In-Memory Unit of 10 Transistors with Standard 6T SRAM

Erxiang Ren, Li Luo, Zheyu Liu, F. Qiao, Qi Wei
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Abstract

Memory wall has been a major bottleneck that restrains the speed and power consumption of processors in the Von Neumann architecture. Computing-in-memory (CIM) was proposed as a promising method to tackle the memory wall by implementing computing in memory instead of fetching the value from memory to the processor. Based on the standard 6T -SRAM, this paper proposes a compact CIM (C2IM) unit of 10 transistors. This C2imunit is capable to not only implement the complete function of SRAM, but also realize the multiplication between the input, which is copied into the unit through the current mirror, and the value stored in the SRAM. Current-mode circuits are adopted in this unit so that it can implement higher energy efficient multiply-accumulate (MAC) operation with simpler control timing and transistor cost. Based on TSMC 65nm CMOS lower power process, the proposed unit can achieve 166.67 TOPS/W energy efficiency under 200MHz clock frequency.
C2IM:采用标准6T SRAM的10个晶体管的紧凑型内存计算单元
在冯·诺依曼架构中,内存墙一直是制约处理器速度和功耗的主要瓶颈。内存计算(CIM)是一种很有前途的解决内存墙的方法,它通过在内存中实现计算而不是从内存中获取值到处理器。本文在标准6T -SRAM的基础上,提出了一种包含10个晶体管的紧凑CIM (C2IM)单元。该C2imunit不仅能够实现SRAM的完整功能,而且能够实现通过电流镜像复制到该单元的输入与SRAM中存储的值之间的乘法运算。本单元采用电流型电路,以更简单的控制时序和晶体管成本实现更高能效的乘法累加运算。基于台积电65nm CMOS低功耗工艺,该单元在200MHz时钟频率下可实现166.67 TOPS/W的能效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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