A High Survivability Low-Noise Amplifier for V-band Applications

Yi-Fan Tsao, Yuan Wang, Ping-Hsun Chiu, Heng-Tung Hsu
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Abstract

In this paper, we report a GaN-based low-noise amplifier (LNA) with high survivability targeting for V-band applications. This LNA was measured to deliver a small-signal gain of 23.5 dB and a noise figure (NF) of 3.3 dB at 60 GHz. The ruggedness of the LNA was investigated experimentally by injecting continuous wave (CW) signal at the input port with various power levels and durations. While stressing up to the input level of 25.1 dBm at 60 GHz for 16 hours, the LNA showed a 1.5-dB decrease in linear gain, and 0.3-dB increase in noise figure. The experimental results have demonstrated a great potential for the proposed LNA to be implemented in highly-reliable systems targeting for operation at V-band frequencies.
用于v波段应用的高生存性低噪声放大器
在本文中,我们报告了一种基于氮化镓的低噪声放大器(LNA),具有高生存性目标,用于v波段应用。经测量,该LNA在60 GHz时的小信号增益为23.5 dB,噪声系数(NF)为3.3 dB。通过在输入端注入不同功率电平和持续时间的连续波(CW)信号,研究了LNA的坚固性。在60 GHz下,当应力达到25.1 dBm的输入电平并持续16小时时,LNA的线性增益降低1.5 db,噪声系数增加0.3 db。实验结果表明,所提出的LNA在高可靠的系统中具有很大的潜力,目标是在v波段频率上运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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