Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282748

E. Pichonat, J. Kuzmík, S. Bychikhin, D. Pogany, M. Poisson, B. Grimbert, C. Gaquière

引用次数: 8

Abstract

The paper reports on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1 mum spatial resolution and 10degC temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device

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利用微拉曼散射光谱和瞬态干涉映射技术分析AlGaN/GaN高电子迁移率晶体管的温度

本文报道了在蓝宝石衬底上生长的活性AlGaN/GaN hemt的温度测量，即自热效应。利用微拉曼光谱在直流条件下测量温度，具有1 μ m的空间分辨率和10℃的温度精度。采用瞬态干涉法和热模拟相结合的方法进行了瞬态分析。结果与电方法在直流和瞬态模式下得到的结果吻合得很好。8(2)指器件的热阻为210 K/W (280 K/W)

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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