CoW Package Solution for Improving Thermal Characteristic of TSV-SiP for AI-Inference

S. Seo, Chajea Jo, Mina Choi, Taehwan Kim, Hyoeun Kim
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引用次数: 10

Abstract

Logic device for AI-inference needs high band width and low latency characteristics to increase the response speed. In order to overcome the size limitation of a single logic chip and secure these characteristics, it is inevitable to separate the SRAM function to increase the memory capacity and apply a 3D package structure that directly stacks with logic. The structure of stacking logic and memory can be implemented in four cases; face to face and back to face (B2F), Logic on SRAM and SRAM on Logic. Among them, thermal characteristics in SRAM on Logic with B2F are not stronger than other structures because in a server environment where most of the heat is forcibly discharged through the cooler installed on the top of package, a lot of heat generated from the logic front side does not go directly to the cooler through Si alone, but passes through the micro-bump bonding layer and the entire SRAM chip. In this study, it was presented that a detailed method for reducing the thermal resistance of the micro-bump junction in order to improve the thermal characteristics in the SRAM on Logic stack package structure. Test vehicle consisted of top chip (93mm2) and bottom chip (103mm2) with micro-bump connections of under $40 \mu\mathrm{m}$ in pitch and under $20 \mu\mathrm{m}$ in diameter. The main influence factors were analyzed in terms of the joint structure, material, and layout design, and thermal resistance was measured and compared after achieving actual package to confirm exactly the effect of each major factor on reducing package thermal resistance.
改善ai推理TSV-SiP热特性的CoW封装方案
用于人工智能推理的逻辑器件需要高带宽和低延迟特性来提高响应速度。为了克服单个逻辑芯片的尺寸限制并确保这些特性,必须分离SRAM功能以增加存储容量,并采用直接与逻辑堆叠的3D封装结构。堆叠逻辑和存储器的结构可以在四种情况下实现;面对面和背对背(B2F),逻辑在SRAM上,SRAM在逻辑上。其中,具有B2F的SRAM的热特性并不比其他结构更强,因为在服务器环境中,大部分热量都是通过安装在封装顶部的冷却器强制排出的,逻辑前端产生的大量热量并不是单独通过Si直接进入冷却器,而是通过微碰撞键合层和整个SRAM芯片。本文提出了一种降低微碰撞结热阻的方法,以改善逻辑堆叠封装结构上SRAM的热特性。测试车由顶部芯片(93mm2)和底部芯片(103mm2)组成,微凹凸连接的间距小于$40 \mu\ mathm {m}$,直径小于$20 \mu\ mathm {m}$。从接头结构、材料、布局设计等方面对主要影响因素进行了分析,并在实现实际封装后对热阻进行了测量和比较,以准确确定各主要因素对降低封装热阻的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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