Non-uniform spatial distribution of spin polarized current in perpendicular magnetic tunnel junction free layer for logic operation

Abstract

In recent years, magnetic tunnel junctions (MTJs) have attracted great interests in the development of next generation high density non-volatile memory and logic chips. Though several MTJ-based logic structures have been proposed and demonstrated, these designs necessitate the inclusion of other electronic components to read the spintronic data as an electronic signal. Additionally, different levels of operations are required to achieve the desired logical function. In this work, we present a novel scheme for logic operation that is able to perform logical operations in two steps and requires no intermediate circuitry to sense the spintronic data. The device works by exploiting the magnetization dynamics of a spatial dependent distribution of current density of a magnetic tunnel junction free layer.