Statistical optimization of high frequency LDMOS devices via hyper-fractionated experimental designs

Abstract

Advanced statistical techniques are utilized to develop a multivariable device characterization of a submicron, two gigahertz laterally diffused metal oxide semiconductor (LDMOS) transistor. A twelve variable, 1/128th fractional factorial of resolution class IV is designed and executed to characterize this device in terms of threshold voltage, contact resistance, and leakages. The Motorola "10/spl times/" Product Development Initiative is presented and the contribution of hyper-fractionated experimental designs to this and other "time to market" challenges is discussed.