Functionalizing of the scaling parameter to describe subthreshold leakage phenomenon in titanium dioxide memristor

Abstract

The memristor (memory resistor) is the fourth passive element of electrical circuits having dynamic resistance with the ability to keep the last level of resistance even after the power supply is interrupted. This article presents a simplified mathematical function with the capability to define the threshold conditions for memristor operation and a new pattern to describe and modeling of the unwanted current leakage in the subthreshold situation for HP TIO2 memristor. These special features provide a more realistic scheme of TIO2 memristor behavior. Our proposed mathematical function is adaptive with the majority of previous prominent works around the ionic drift modeling of HP memristor and is easy to use in SPICE simulators so can be utilized in a wide range of designs and applications. To our best known this is the first research paper in which the issue of subthreshold current leakage modeling of the memristor is addressed.