P. Farinelli, H. El Ghannudi, G. Resta, B. Margesin, M. Erspan, R. Sorrentino
{"title":"High power SP4T MEMS switch for space applications","authors":"P. Farinelli, H. El Ghannudi, G. Resta, B. Margesin, M. Erspan, R. Sorrentino","doi":"10.23919/EUMC.2012.6459296","DOIUrl":null,"url":null,"abstract":"This paper presents the development of a fully packaged and connectorized SP4T MEMS switch for space applications. The device is provided with metal hermetic box, SSMA and SMA connectors and space qualified DC-DC Converter to operate with standard 0-5V signals. The fully packaged switches show insertion loss better than 0.65dB and isolation better than 50dB up to 240MHz. Power handling capability up to 2.5W was demonstrated during the 160h of the applied burn-in test. The devices has been developed by RF Microtech (Perugia - Italy), FBK (Fondazione Bruno Kessler - Trento - Italy) and Optoi Microelectronics (Trento - Italy).","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 42nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents the development of a fully packaged and connectorized SP4T MEMS switch for space applications. The device is provided with metal hermetic box, SSMA and SMA connectors and space qualified DC-DC Converter to operate with standard 0-5V signals. The fully packaged switches show insertion loss better than 0.65dB and isolation better than 50dB up to 240MHz. Power handling capability up to 2.5W was demonstrated during the 160h of the applied burn-in test. The devices has been developed by RF Microtech (Perugia - Italy), FBK (Fondazione Bruno Kessler - Trento - Italy) and Optoi Microelectronics (Trento - Italy).