LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282684

C. Maneux, B. Grandchamp, N. Labat, A. Touboul, M. Riet, J. Godin, P. Bove

引用次数: 5

Abstract

This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, SiB occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated

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InP/GaAsSb/InP和InP/InGaAs/InP HBTs的低频噪声分析

本文首次尝试分析了InP/GaAsSb/InP HBT与InP/InGaAs/InP HBT的低频噪声。实现了对发生在发射基极结区的突出电流噪声源SiB的提取。将1/f噪声作为技术指标，研究了洛伦兹形状噪声

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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