Design rule centring for row redundant content addressable memories

W.B. Noghani, I. Jalowiecki
{"title":"Design rule centring for row redundant content addressable memories","authors":"W.B. Noghani, I. Jalowiecki","doi":"10.1109/DFTVS.1992.224353","DOIUrl":null,"url":null,"abstract":"A yield model is developed to estimate yield values for an associative processing chip based largely on content addressable memory (CAM). The yield model combines analysis of a row redundant strategy for the CAM with a relaxation of design rules to minimise column defects.<<ETX>>","PeriodicalId":319218,"journal":{"name":"Proceedings 1992 IEEE International Workshop on Defect and Fault Tolerance in VLSI Systems","volume":"64 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1992 IEEE International Workshop on Defect and Fault Tolerance in VLSI Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFTVS.1992.224353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A yield model is developed to estimate yield values for an associative processing chip based largely on content addressable memory (CAM). The yield model combines analysis of a row redundant strategy for the CAM with a relaxation of design rules to minimise column defects.<>
为行冗余内容可寻址存储器设计规则中心
建立了一种基于内容可寻址存储器(CAM)的联想处理芯片成品率模型。屈服模型结合了CAM的行冗余策略分析和设计规则的放松,以尽量减少柱缺陷
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信