Terahertz space-charge interactions in a semiconductor nanoplate

T. Shen, Zhijing Hu, T. Wong
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Abstract

To properly account for space-charge effects, transport models can be employed in the analysis of charge motions within semiconductor nanostructures. In this paper, we present the analysis and computations of internal charge and field distributions in a semiconductor nanoplate. Analytical and numerical simulation results reveal space-charge waves excited in the plate as the bulk plasma frequency is approached, which is in the terahertz band. A lumped equivalent circuit is developed to characterize the dispersion properties and to facilitate the consideration of more complex structures based on aggregates of nanoplates for potential circuit and waveguide applications in the terahertz frequency range.
半导体奈米片中的太赫兹空间电荷相互作用
为了适当地考虑空间电荷效应,输运模型可以用于分析半导体纳米结构内的电荷运动。本文对半导体纳米片的内部电荷和场分布进行了分析和计算。分析和数值模拟结果表明,当体等离子体频率接近于太赫兹频段时,在板内激发出空间电荷波。建立了集总等效电路,以表征色散特性,并有助于考虑基于纳米片聚集体的更复杂结构,用于太赫兹频率范围内的潜在电路和波导应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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