A robust chip capacitor for video band width in RF power amplifiers

A. A. Aziz, F. Danaher, A. Hashim
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Abstract

Year 2013 demonstrated a considerable manufacturing challenges to enable the roll out of RF 4G systems. The popularity of utilizing the High chip capacitor for increased VBW tested the resources for both RF assembly in Freescale and the chip manufacturer and subcontractors associated with chip capacitor production. It was demonstrated that the existing chip capacitor device, while designed well, required several enhancements to increase final product assembly quality while reducing the significant CLC footprint. The initial chip capacitor design utilized a standardized ceramic build process needed plating format which in the long run contributed to chip shorting at final assembly due to the existing chip capacitor prone to get solder short and supplier not able to provide consistent solder pattern. To remedy this design, the chip cap processing was radically redefined to produce a chip cap with reverse electrodes and an in-house solder foil process. To date, the new capacitor has been introduced in over a dozen RF products and is being utilized in significant run rates to produce the higher margins needed in this competitive environment.
一种用于射频功率放大器视频带宽的鲁棒片式电容
2013年,为了实现RF 4G系统的推出,面临着相当大的制造挑战。利用高芯片电容来增加VBW的普及测试了飞思卡尔射频组装和芯片制造商以及与芯片电容生产相关的分包商的资源。结果表明,现有的片式电容器件虽然设计良好,但需要进行一些改进,以提高最终产品的组装质量,同时显著减少CLC占用空间。最初的片式电容器设计采用了标准化的陶瓷制造工艺所需的电镀格式,从长远来看,由于现有的片式电容器容易出现焊料短缺,供应商无法提供一致的焊料图案,因此在最终组装时导致了芯片短路。为了纠正这种设计,芯片帽的加工被彻底重新定义,以生产具有反向电极和内部焊锡箔工艺的芯片帽。迄今为止,新电容器已被引入到十多个射频产品中,并且正在以显着的运转率使用,以在这种竞争激烈的环境中产生更高的利润。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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