Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269309

D. Lee, B. Lee, I.S. Jung, T. Kim, Y. Son, Sun-Ghil Lee, Young-pil Kim, Siyoung Choi, U. Chung, J. Moon

引用次数: 10

Abstract

For the first time, a highly manufacturable fin-channel array transistor (FCAT) on a bulk Si substrate has been successfully integrated in a 512 M density DRAM with sub-70nm technology. The FCAT shows an excellent short channel behavior, such as extremely low subthreshold swing (SS) (/spl sim/75mV/dec) and DIBL (/spl sim/13mV/V), and a high cell transistor drive current with remarkably low subthreshold leakage current (/spl sim/0.2fA/cell).

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鳍通道阵列晶体管(FCAT)，具有低于70纳米的低功耗和高性能DRAM

一种高度可制造的鳍状通道阵列晶体管(FCAT)在块状硅衬底上已成功集成到512 M密度的低于70纳米技术的DRAM中。FCAT具有优异的短通道性能，如极低的亚阈值摆幅(SS) (/spl sim/75mV/dec)和DIBL (/spl sim/13mV/V)，以及高电池晶体管驱动电流和极低的亚阈值漏电流(/spl sim/0.2fA/cell)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE International Electron Devices Meeting 2003

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