GaInP/GaAs HBTs for microwave applications

Abstract

The authors present an overview of the current status of the development of the GaInP/GaAs heterojunction bipolar transistor (HBT) technology. One of the most important advantages of using GaInP instead of GaAlAs is technological. Each of the GaInP and GaAs layers can be etched selectively with respect to the other. It is shown that GaInP/GaAs HBTs have identical or superior device performance to GaAlAs/GaAs HBTs and that the etching selectivity facilitates greatly the device fabrication and allows excellent device performance uniformity and reproducibility.<>