A compact SOI model for fully-depleted and partially-depleted 0.25 /spl mu/m SIMOX devices

Abstract

A compact SOI MOSFET model based on the Bsim3v3 bulk model with new features of effective substrate bias and transition voltage concepts to cover the transition behavior from partially-depleted to fully-depleted modes, R/sub out/ smoothing, enhanced models for impact ionization, L/sub eff/-dependent parasitic BJT and self-heating is proposed. Results obtained from this model are in excellent agreement with the experimental I-V, C-V and propagation-delay time data.