Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

Abstract

In this paper, results are presented for eight samples. The investigated SiGe HBTs are compatible with the CMOS core process. They are based on a double poly-silicon technology (base and emitter), use a fully self aligned architecture (FSA emitter-base and collector-base junctions) and selective base epitaxy (SEG) with carbon incorporation.