F. Chang, Sean Wu, Maw-Shung Lee, Jianwei Yu, Chiaokai Chang, Chengxiong Huang
{"title":"Crystalline Structure and Surface Morphology of the AlN films sputtered on 64°-YX LiNbO3","authors":"F. Chang, Sean Wu, Maw-Shung Lee, Jianwei Yu, Chiaokai Chang, Chengxiong Huang","doi":"10.1109/ISAF.2007.4393196","DOIUrl":null,"url":null,"abstract":"Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64deg-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 C and 5 m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64deg-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 C and 5 m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).