Surface Stress Contrast between Reconstruction and Termination on Silicon (111)

Abstract

Nano-structure formation influences strongly the surface stress. Silicon surface produces a unique stress that corresponds to the reconstruction based on dangling bond reduction and adatom formation. We focused on surface stress measurements during reconstruction, hydrogen-termination, and bismuth-termination on Si(111) surfaces. In order to obtain information on the surface stress and the surface structure simultaneously, we combined surface-curvature and reflection high-energy electron-diffraction instrumentations in an identical ultrahigh vacuum system. The surface stress behaviors during desorption and adsorption processes on the Si(111) surfaces revealed that surface stress evolution during the surface structure formation.