Chip-scale physical interconnect models (Tutorial)

R. Topaloglu
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Abstract

Modeling layout-dependent interconnect processing steps is useful to predict integrated circuit design behavior. We illustrate key data and steps in developing etch, electrochemical deposition (ECD), and chemical-mechanical polishing (CMP) models in order to predict chip topography. We utilize an interferometer for validation of models for the first time. Such models are useful to select optimal fill algorithms using a novel DOE-based flow as proposed herein.
芯片级物理互连模型(教程)
建模与布图相关的互连处理步骤有助于预测集成电路的设计行为。我们阐述了开发蚀刻、电化学沉积(ECD)和化学机械抛光(CMP)模型的关键数据和步骤,以预测芯片的形貌。我们首次利用干涉仪对模型进行验证。这些模型对于使用本文提出的基于doe的流选择最佳填充算法是有用的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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