Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335637

A. Shestakov, K. Zhuravlev, V. A. Arykov, V. A. Kagadey

引用次数: 4

Abstract

In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.

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杂质和掺杂对具有肖特基势垒的GaAs场效应晶体管特性的影响

本文建立了离子注入MESFET的模型，发现了其特性与衬底的依赖性。在基质中发现了深中心和浅中心的浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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