{"title":"Improvement of the thin film transformer characteristics by using a new fabrication process","authors":"H.W. Zhang, Z. Zhong, Y.L. Liu, H. Wang","doi":"10.1109/INTMAG.1999.837231","DOIUrl":null,"url":null,"abstract":"H.WZhang,Z.Y.Zhong.Y.L.Liu,H.C.Wang Institute of lnfmation and Mataids Udvemity of Uc=,Uonic Science and Technologl of China, Chengdu,610054,P.R.China 1.lntmductioa A great mterest har been amacted m planar magnetic devices to miniamre various electronic equipment including transformers and inductors, especially for the pwer elecuonics application[l-2]. The planar core with dgrag, spiral and wioding coil fabricated on the substrate show high core loss md large magnetic-fluxleakage because ofthe magnaic circuit was not close, meanwhile, the lithography and ion etching dry pmess are wry complexity and need lots of advanced process sysfem such as nitrogen ion beam etching system and sputterinp rystem[34]. Therefore, this paper describes a new thin film transformer fabricated by mask vacuum evaporated process. This ihm film m f o r m e r is composed of €-shaped CoZrRe amorphous magnetic l a p s wound With Cu thin film coils, primary coil fums and secandary coil bxns are 3:1,32. The measured results show that the €-Shaped thin films transformer har a high Q Value and good properties of high freauencv operation, especially in 0.5-4MHz range. 2.Experiment.l pmeedure A. Design R I R I","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"6 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Magnetics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.1999.837231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
H.WZhang,Z.Y.Zhong.Y.L.Liu,H.C.Wang Institute of lnfmation and Mataids Udvemity of Uc=,Uonic Science and Technologl of China, Chengdu,610054,P.R.China 1.lntmductioa A great mterest har been amacted m planar magnetic devices to miniamre various electronic equipment including transformers and inductors, especially for the pwer elecuonics application[l-2]. The planar core with dgrag, spiral and wioding coil fabricated on the substrate show high core loss md large magnetic-fluxleakage because ofthe magnaic circuit was not close, meanwhile, the lithography and ion etching dry pmess are wry complexity and need lots of advanced process sysfem such as nitrogen ion beam etching system and sputterinp rystem[34]. Therefore, this paper describes a new thin film transformer fabricated by mask vacuum evaporated process. This ihm film m f o r m e r is composed of €-shaped CoZrRe amorphous magnetic l a p s wound With Cu thin film coils, primary coil fums and secandary coil bxns are 3:1,32. The measured results show that the €-Shaped thin films transformer har a high Q Value and good properties of high freauencv operation, especially in 0.5-4MHz range. 2.Experiment.l pmeedure A. Design R I R I
H.WZhang、Z.Y.Zhong.Y.L.Liu H.C.中国电子科技大学信息与计算机科学研究所,成都610054中国1。平面磁性器件已引起人们极大的兴趣,以小型化各种电子设备,包括变压器和电感器,特别是电力电子应用[1 -2]。由于磁路不闭合,在基板上制作的平面铁芯存在铁芯损耗大、漏磁大的问题,同时光刻和离子刻蚀干燥过程非常复杂,需要大量先进的工艺系统,如氮离子束刻蚀系统和溅射系统[34]。为此,本文介绍了一种用掩模真空蒸发法制备的新型薄膜变压器。该薄膜由Cu薄膜线圈绕制而成,主线圈比为3:1,副线圈比为3:32。测量结果表明,该型薄膜变压器具有高Q值和良好的高频工作性能,特别是在0.5 ~ 4mhz范围内。2.实验。1 .步骤a:设计R I R I I