Detectivity enhanced IR detectors using metamaterials

Abstract

Using metamaterial structures, a novel Infrared (IR) detector is proposed to operate at the frequency of 180 THz. It has been shown that using metamaterials can concentrate the field in the semiconductor region (here InGaAsSb) resulting in higher absorption and higher detectivity for the IR detector. The proposed structure has been analyzed using full wave numerical methods. The simulation results show a field enhancement as big as 37 in the semiconductor region.