Optimized 0.1 mu m GaAs MESFET's

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188065

K. Moore, J. East, G. Haddad, T. Brock

引用次数: 1

Abstract

The authors have optimized the design of conventional GaAs MESFETs for high-frequency operation. FETs were fabricated using electron beam lithography to define 0.1- mu m mushroom and T gates. The best results obtained included peak transconductance of 600 mS/mm, f/sub t/=93 GHz, and f/sub max/>or=150 GHz. In addition, studies were carried out to examine the effect of gate shape and location on high-frequency device performance.<>

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优化了0.1 μ m GaAs MESFET

作者对传统GaAs mesfet的高频工作设计进行了优化。利用电子束光刻技术制备了场效应管，定义了0.1 μ m的蘑菇和T栅极。获得的最佳结果包括峰值跨导600 mS/mm, f/sub /=93 GHz, f/sub max/>or=150 GHz。此外，还研究了栅极形状和位置对高频器件性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1992 IEEE Microwave Symposium Digest MTT-S

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