Independently-Controlled-Gate FinFET 6T SRAM Cell Design for Leakage Current Reduction and Enhanced Read Access Speed

Abstract

In this paper, two novel 6T SRAM cells based on Independently-Controlled-Gate FinFETs are proposed. The new 6T cells are derived from 4T cells: by separating the read timing and read-line, the proposed new cells allow simultaneously read & write to different addresses. To overcome the traditional retention time problem in 4T cells, the proposed cells reduce leakage by changing the back-gate connection and increasing the capacitance at data storage points (Q, QB). Compared to previous 6T FinFET SRAMs, the proposed cells reduce the static leakage current, and enhance the write and read speed. In addition, this structure is scalable for multi-ports.