Menka Jain, N. Karan, Jongsik Yoon, Haiyan Wang, R. Katiyar, Q. Jia
{"title":"Tunable dielectric properties of lead strontium titanate thin films by sol-gel technique","authors":"Menka Jain, N. Karan, Jongsik Yoon, Haiyan Wang, R. Katiyar, Q. Jia","doi":"10.1109/ISAF.2008.4693869","DOIUrl":null,"url":null,"abstract":"For the applications in tunable microwave devices, thin films of a potential candidate material, PbxSr1-xTiO3 (with ¿=0.3), were studied. To study dielectric proeprties in coplanar and metal-insulator-metal configuration, the PbxSr1-xTiO3 films were deposited on single crystalline LaAlO3 and conductive LaNiO3 coated LaAlO3 substrates using sol-gel technique. The film on LaAlO3 was highly c-axis oriented and epitaxial. At room temperature, dielectric tunability values as high as 18% (at 20kV/cm) and 70% (at 225kV/cm) were achieved for the Pb0.3Sr0.7TiO3 film on LaAlO3 and LaNiO3/LaAlO3, respectively.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For the applications in tunable microwave devices, thin films of a potential candidate material, PbxSr1-xTiO3 (with ¿=0.3), were studied. To study dielectric proeprties in coplanar and metal-insulator-metal configuration, the PbxSr1-xTiO3 films were deposited on single crystalline LaAlO3 and conductive LaNiO3 coated LaAlO3 substrates using sol-gel technique. The film on LaAlO3 was highly c-axis oriented and epitaxial. At room temperature, dielectric tunability values as high as 18% (at 20kV/cm) and 70% (at 225kV/cm) were achieved for the Pb0.3Sr0.7TiO3 film on LaAlO3 and LaNiO3/LaAlO3, respectively.