Interface-engineered barium hexaferrite-wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions

Abstract

Transition from fourth to fifth generation wireless technologies requires a shift from 2.3 GHz to Ka-band with the promise of revolutionary increases in data handling capacity and transfer rates at greatly reduced latency among other benefits. A key enabling technology is the integration of Ka-band massive multiple input–multiple output (m-MIMO) antenna arrays. m-MIMO array elements simultaneously transmit and receive (STAR) data providing true full duplexing in time and frequency domains. A necessary innovation calls for the integration of device quality Ka-ferrites with wide-bandgap (WBG) semiconductor heterostructures allowing for system on-wafer solutions. Here, we report results of systematic studies of pulsed laser deposited (PLD) barium hexaferrite (BaM) films on industrial compatible WBG semiconductor heterostructures suitable for operation in Ka-band circulators.