Fabrication and electrical performance of CVD-grown MoS2 transistor

Abstract

A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69 cm²/V·s) is achieved by using Ta2O5 as the buffer layer.