{"title":"Optimization of S1 Lamb wave resonators with A10.8Sc0.2N","authors":"Shuai Shao, Zhifang Luo, Tao Wu","doi":"10.1109/NEMS51815.2021.9451451","DOIUrl":null,"url":null,"abstract":"We demonstrate the optimized design of A10.8Sc0.2N-based S1 Lamb wave resonators. The S1 mode shows a phase velocity of over 20,000 m/s, and an electromechanical coupling factor of over 7% can be achieved using the enhancement of the AIN piezoelectric characteristics by Sc doping. To exploit the high phase velocity region with thickness/lambda (h/λ) less than 0.3, a clean spectral response can be obtained by utilizing the double-IDT electrode configuration. The electrode coverage can significantly suppress the spurious modes, and high order modes free resonance has been achieved by utilizing 20% electrode coverage design. Although Sc-doping in AIScN film causes a slight decrease in phase velocity, significant enhancement of the electromechanical coupling coefficient provides potential for high frequency and large bandwidth applications.","PeriodicalId":247169,"journal":{"name":"2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"59 19","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS51815.2021.9451451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We demonstrate the optimized design of A10.8Sc0.2N-based S1 Lamb wave resonators. The S1 mode shows a phase velocity of over 20,000 m/s, and an electromechanical coupling factor of over 7% can be achieved using the enhancement of the AIN piezoelectric characteristics by Sc doping. To exploit the high phase velocity region with thickness/lambda (h/λ) less than 0.3, a clean spectral response can be obtained by utilizing the double-IDT electrode configuration. The electrode coverage can significantly suppress the spurious modes, and high order modes free resonance has been achieved by utilizing 20% electrode coverage design. Although Sc-doping in AIScN film causes a slight decrease in phase velocity, significant enhancement of the electromechanical coupling coefficient provides potential for high frequency and large bandwidth applications.