Design and Test Issues of a SOl CMOS Voltage Controlled Oscillators for Radiation Tolerant Frequency Synthesizers

D. Sotskov, V. Elesin, G. Nazarova, K. Amburkin, D. Amburkin, G. Chukov, N. Usachev, A. Nikiforov
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引用次数: 2

Abstract

Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs implemented in 350 nm and 180 nm SOI CMOS processes. According to the radiation test results the DCC-LC VCOs are tolerant to total ionizing dose damage up to 300 krad, low-sensitive to heavy ions exposure with LET up to 80 Me V. cm2/mg and can be effectively used in frequency synthesizers for space applications.
用于耐辐射频率合成器的SOl CMOS压控振荡器的设计和测试问题
介绍了空间应用射频压控振荡器(vco)的设计和测试问题。该方法在350 nm和180 nm SOI CMOS工艺中实现的差分交叉耦合电感-电容(dc - lc)压控振荡器的设计和测试中得到了验证。根据辐射测试结果,DCC-LC vco可耐受高达300 krad的总电离剂量损伤,对LET高达80 Me V. cm2/mg的重离子暴露低敏感,可有效用于空间应用的频率合成器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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