Millimeter-wave CMOS transceiver linearization for ultra high-speed wireless backhaul links

Abstract

For future millimeter-wave backhaul links, the increasing demand of high-speed communication systems over 10-Gbps is imposing an increasing modulation complexity from 64-QAM to 256-QAM, or even up to 1024-QAM, which results in a stringent linearity requirement of the millimeter-wave CMOS transceiver design. This paper will cover recently reported linearization techniques for millimeter-wave CMOS low-noise amplifiers, frequency converters, and power amplifiers. These techniques are essential for future efficiency enhancement and self-calibrated high-yield mass production of millimeter-wave products.