Trench DRAM structures for the analysis of two- and three-dimensional leakage phenomena

Abstract

Two- and three-dimensional leakage phenomena in moderately and heavily doped and gate diode structures are analyzed using a novel set of macro-array trench DRAM (dynamic random-access memory) capacitor storage nodes and planar MOS drain structures. Heavily doped gated diode structures (trench and planar) are used for the analysis of the gate-induced thermal generation mechanism and band-to-band tunneling. The results are relevant for understanding the leakage phenomena in trench DRAM and MOSFET drain structures.<>