A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Abstract

A compact model for set process of RRAM with graphene as electrode is proposed. Operation mechanisms, including the generation of oxygen vacancies, the migration of oxygen ions and the oxidation of graphene electrode, are considered to simulate the set process of RRAM. The simulated I-V characteristics of RRAM during set process agree well with previous experiments. The compact model shows good potential in simulation and design of emerging RRAM based integrated circuit.