Fast method to identify the root cause for ILD Vbd fail

Abstract

At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by ¿interface-mode¿ or by ¿CD-mode¿. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.