Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy

2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI:10.1109/INOW.2008.4634505

B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl

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Abstract

The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.

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利用ps时间分辨阴极发光显微镜研究了高质量、完全聚结的平面GaN ELO结构的微观重组动力学

在5K ~ 300K的温度范围内，利用ps时间分辨阴极发光显微镜分析了a面GaN外延横向过生长结构中自由激子(FX)和基面层错(BSF)发射的复合动力学。分析了供体对FX的捕获和BSF量子阱中空穴的热离子发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 International Nano-Optoelectronics Workshop

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