{"title":"Challenges to realizing deep-UV AlGaN-based lasers","authors":"T. Wunderer","doi":"10.1109/IPCON.2016.7831274","DOIUrl":null,"url":null,"abstract":"Optical sources that emit in the deep-UV spectral regime have applications that include chemical/biochemical detection, water purification, surface decontamination, medical diagnostics and treatment, non-line-of-sight communication, and materials curing. A particularly challenging application is for a deep-UV laser source to enable point-of-need identification of bio-chemicals by Raman spectroscopy, which requires select wavelengths (<240nm), high power, and high beam quality in a compact, rugged system. The AlGaN semiconductor material system offers a promising path to realizing such a system, with direct access to the emission wavelengths of interest and demonstrated growth of multi-quantum-well heterostructures of high crystalline quality.","PeriodicalId":396459,"journal":{"name":"2016 IEEE Photonics Conference (IPC)","volume":" 985","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCON.2016.7831274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Optical sources that emit in the deep-UV spectral regime have applications that include chemical/biochemical detection, water purification, surface decontamination, medical diagnostics and treatment, non-line-of-sight communication, and materials curing. A particularly challenging application is for a deep-UV laser source to enable point-of-need identification of bio-chemicals by Raman spectroscopy, which requires select wavelengths (<240nm), high power, and high beam quality in a compact, rugged system. The AlGaN semiconductor material system offers a promising path to realizing such a system, with direct access to the emission wavelengths of interest and demonstrated growth of multi-quantum-well heterostructures of high crystalline quality.