Modeling and simulation of the electrothermal behavior of the power bipolar transistor

Abstract

We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the device's temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation.<>