GaAs on (001) Si templates for near infrared InP QD lasers

Abstract

In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm−2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.