GaAs-GaP core-shell nanowire transistors: A computational study

Abstract

We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k·p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as the shell thickness increases. We analyze its impact on the transistor performance, and our simulation results indicate that in order to achieve a good ON/OFF current ratio the epitaxial shell should be grown thin enough.