Surface Growth and Diffusion Energetics of Ag Monolayers on Cu (001)

Pub Date : 2014-04-04 DOI:10.3390/MET4020108
G. Antipas
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引用次数: 1

Abstract

The growth of Ag monolayers on Cu (001) was studied by periodic Density Functional Theory (DFT). Despite the limited solid solubility of Ag in Cu, the growth of a single Ag overlayer on Cu (001) was predicted as feasible. In contrast, the growth of consecutive Ag monolayers was found to be energetically forbidden. Inter-diffusion of Ag monolayers into Cu was raised as a possibility but it was dependent on the sequence in which the Ag monolayers were introduced into the Cu bulk. The Ag layers preferred to be kept neither too far apart nor too close to each other, the optimum spacing between two Ag monolayers determined to be that of two consecutive Cu layers. Ag diffusion mediated tensile stress in the Cu cell by causing an increase of the unit cell constant by as much as 22%. Interactions between the Ag and Cu species also involved a degree of covalency. In general, progression of a surface Ag monolayer into the Cu bulk involved charge depletion over the Ag species and a simultaneous charge concentration over neighboring Cu atoms; this mechanism was found to influence Cu up to a depth of four surface layers.
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Cu表面银单分子膜的表面生长和扩散动力学(001)
利用周期密度泛函理论(DFT)研究了Cu(001)表面银单分子膜的生长。尽管Ag在Cu中的固体溶解度有限,但预测在Cu(001)上生长单个Ag覆盖层是可行的。相反,发现连续银单分子层的生长在能量上是被禁止的。银单分子层向Cu中扩散的可能性被提出,但这取决于银单分子层被引入Cu体的顺序。银层之间的间距既不太远也不太近,两个银单层之间的最佳间距确定为两个连续的铜层之间的间距。银扩散介导了铜电池中的拉伸应力,导致单元电池常数增加多达22%。银和铜之间的相互作用也涉及一定程度的共价。一般来说,表面银单分子层向Cu体的进展涉及Ag类的电荷耗尽和相邻Cu原子上的同时电荷浓度;发现这种机制对Cu的影响深度可达四层表面层。
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